The Corial 360IL is a large area plasma etch system offering high throughput, without compromising process performance or quality.The 360IL is based on CORIAL's latest generation ICP (inductively coupled plasma) source. The system features a high-density plasma, 2 MHz ICP RF generator, and state-of-the-art gas injection, allowing fast etch rates and excellent uniformities.Featuring a vacuum load-lock, the Corial 360IL delivers stable process conditions, short pump cycles and provides the capability to run fluorinated and chlorinated based chemistries on the same tool.Our PSS processes deliver perfect conical-shaped features, even at the wafer edge, with industry leading uniformity and repeatability.For MEMS and power devices markets, the Corial 360IL ICP-RIE system is capable of processing a wide range of materials including silicon, oxides, nitrides, and III-V compound semiconductors.
Key Benefits
PROCESS FLEXIBILITY
● The RF match box operating range (from 100 W to 2000 W) supports a wide range of customer applications
● The vacuum load lock enables using a combination of fluorinated and chlorinated chemistries in the same tool
HIGH ETCH RATE CAPABILITY
● Wall temperature > 250°C; ICP max power: 2000 W; RF max power: 1000 W; high efficiency of RF coupling to plasma
● Fast and uniform etching: GaAs (500 nm/min), Sapphire (75 nm/min), GaN (200 nm/min) …
BEST REPEATABILITY
● Load lock for stable and repeatable process conditions
● Novel cathode design and efficient helium back side cooling of the shuttle and substrate ensure uniform temperature control (from -50°C) during the etch process
EXCELLENT UNIFORMITY
● High density plasma enables highly uniform PSS profiles
● Optimized gas showerhead with top gas inlets
OPTIMIZED LONG-LIFE SHUTTLE
● Proprietary quartz shuttle (carrier) design for PSS, with edge effect < 1 mm
● Quartz carrier lifetime > 5,000 runs
HIGH THROUGHPUT
● Large batch capacity: 23 x 2", 7 x 4", 3 x 6"
● Throughput > 8 WPH for PSS application using 4″ substrates
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